Category |
MOSFETs
|
Manufacturer |
Toshiba
|
FET Type |
N-Channel
|
Technology |
MOSFET (Metal Oxide)
|
Drain to Source Voltage (Vdss) |
100 V
|
Current - Continuous Drain (Id) @ 25°C |
92A (Tc)
|
Drive Voltage (Max Rds On、 Min Rds On) |
10V
|
Rds On (Max) @ Id、 Vgs |
4.5mOhm @ 46A、 10V
|
Vgs(th) (Max) @ Id |
4V @ 1mA
|
Gate Charge (Qg) (Max) @ Vgs |
58 nC @ 10 V
|
Vgs (Max) |
±20V
|
Input Capacitance (Ciss) (Max) @ Vds |
5200 pF @ 50 V
|
Power Dissipation (Max) |
800mW (Ta)
|
Operating Temperature |
150°C
|
Mounting Type |
Surface Mount
|
Package/Case |
8-SOP Advance
|