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TPH4R50ANH1,LQ(M
Step Price USD
  • Product Attribute
  • Datasheet
Category MOSFETs
Manufacturer Toshiba
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 92A (Tc)
Drive Voltage (Max Rds On、 Min Rds On) 10V
Rds On (Max) @ Id、 Vgs 4.5mOhm @ 46A、 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5200 pF @ 50 V
Power Dissipation (Max) 800mW (Ta)
Operating Temperature 150°C
Mounting Type Surface Mount
Package/Case 8-SOP Advance
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