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SPD06N60C3ATMA1
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  • Product Attribute
  • Datasheet
Category MOSFETs
Manufacturer Infineon
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 6.2A (Tc)
Drive Voltage (Max Rds On、 Min Rds On) 10V
Rds On (Max) @ Id、 Vgs 750mOhm @ 3.9A、 10V
Vgs(th) (Max) @ Id 3.9V @ 260µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 25 V
Power Dissipation (Max) 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package/Case PG-TO252-3-1
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