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SI3430DV-T1-E3
Step Price USD
  • Product Attribute
  • Datasheet
Category MOSFETs
Manufacturer Vishay
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
Drive Voltage (Max Rds On、 Min Rds On) 6V、 10V
Rds On (Max) @ Id、 Vgs 170mOhm @ 2.4A、 10V
Vgs(th) (Max) @ Id 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 6.6 nC @ 10 V
Vgs (Max) ±20V
Power Dissipation (Max) 1.14W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package/Case 6-TSOP
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