Category | Bipolar Transistors (BJT) |
Manufacturer | Toshiba |
Transistor Type | 8 NPN Darlington |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib、Ic | 1.6V @ 500µA、350mA |
DC Current Gain (hFE) (Min) @ Ic、Vce | 1000 @ 350mA、2V |
Power - Max | 1.31W |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package/Case | 18-SOP |