Category | Bipolar Transistors |
Manufacturer | Toshiba |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 50 mA |
Voltage - Collector Emitter Breakdown (Max) | 150 V |
Vce Saturation (Max) @ Ib、Ic | 500mV @ 1mA、10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic、Vce | 70 @ 10mA、5V |
Power - Max | 800 mW |
Frequency - Transition | 120MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package/Case | TO-92MOD |