Category |
MOSFETs
|
Manufacturer |
TI
|
FET Type |
N-Channel
|
Technology |
MOSFET (Metal Oxide)
|
Drain to Source Voltage (Vdss) |
60 V
|
Current - Continuous Drain (Id) @ 25°C |
50A (Ta)
|
Drive Voltage (Max Rds On、Min Rds On) |
4.5V、10V
|
Rds On (Max) @ Id、Vgs |
9.8mOhm @ 14A、10V
|
Vgs(th) (Max) @ Id |
2.3V @ 250µA
|
Gate Charge (Qg) (Max) @ Vgs |
11.1 nC @ 4.5 V
|
Vgs (Max) |
±20V
|
Input Capacitance (Ciss) (Max) @ Vds |
1770 pF @ 30 V
|
Power Dissipation (Max) |
3.1W (Ta)、77W (Tc)
|
Operating Temperature |
-55°C ~ 150°C (TJ)
|
Mounting Type |
Surface Mount
|
Package/Case |
8-VSONP
|