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FQP5N60C
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  • Product Attribute
  • Datasheet
Category MOSFETs
Manufacturer onsemi
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On、Min Rds On) 10V
Rds On (Max) @ Id、Vgs 2.5Ohm @ 2.25A、10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 25 V
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package/Case TO-220-3
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