Category | Bipolar Transistors (BJT) |
Manufacturer | onsemi |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown(Vceo) | 40V |
Current - Collector(Ic) | 200mA |
Power(Pd) | 300mW |
Vce Saturation (Max) @ Ib、Ic | 300mV @ 5mA、50mA |
DC Current Gain (hFE) (Min) @ Ic、Vce | 100@10mA、1V |
Frequency - Transition(fT) | 300MHz |
Operating Temperature | -55℃~+150℃@(Tj) |