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SMMBT3904LT1G
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  • Product Attribute
  • Datasheet
Category Bipolar Transistors (BJT)
Manufacturer onsemi
Transistor Type NPN
Voltage - Collector Emitter Breakdown(Vceo) 40V
Current - Collector(Ic) 200mA
Power(Pd) 300mW
Vce Saturation (Max) @ Ib、Ic 300mV @ 5mA、50mA
DC Current Gain (hFE) (Min) @ Ic、Vce 100@10mA、1V
Frequency - Transition(fT) 300MHz
Operating Temperature -55℃~+150℃@(Tj)
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