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MMBTA42LT1G
Step Price USD
  • Product Attribute
  • Datasheet
Category Bipolar Transistors (BJT)
Manufacturer onsemi
Transistor Type NPN
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 300 V
Vce Saturation (Max) @ Ib、Ic 500mV @ 2mA、20mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic、Vce 40 @ 30mA、10V
Power - Max 225 mW
Frequency - Transition 50MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package/Case SOT-23-3 (TO-236)
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