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FQB9P25TM
Step Price USD
  • Product Attribute
Category MOSFET
Manufacturer onsemi
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc)
Drive Voltage (Max Rds On、Min Rds On) 10V
Rds On (Max) @ Id、 Vgs 620mOhm @ 4.7A、10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1180 pF @ 25 V
Power Dissipation (Max) 3.13W (Ta)、 120W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package/Case D²PAK (TO-263)
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