Category | Bipolar Transistors (BJT) |
Manufacturer | NXP |
Transistor Type | 2 NPN (Dual) |
Current - Collector (Ic) (Max) | 200mA |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Vce Saturation (Max) @ Ib、Ic | 300mV @ 5mA、50mA |
Current - Collector Cutoff (Max) | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic、 Vce | 100 @ 10mA、1V |
Power - Max | 360mW |
Frequency - Transition | 300MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package/Case | SOT-666 |