| Category | MOSFET |
| Manufacturer | Infineon |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V |
| Current - Continuous Drain (Id) @ 25°C | 39A (Ta)、58A (Tc) |
| Drive Voltage (Max Rds On、Min Rds On) | 4.5V、10V |
| Rds On (Max) @ Id、Vgs | 5mOhm @ 30A、10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.4 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 12 V |
| Power Dissipation (Max) | 2.5W (Ta)、28W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PG-TDSON-8-5 |
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BSC050NE2LSATMA1
- Brand: Infineon MOQ: 5000
- Delivery Date: 7-15 days Incremental amount: 5000
- Package: PG-TDSON-8-5 MPQ: 5000
- Part No: BSC050NE2LSATMA1
In Stock:
10000
Purchase quantity:
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$0.00
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