| Category | MOSFET |
| Manufacturer | Infineon |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Drive Voltage (Max Rds On、Min Rds On) | 10V |
| Rds On (Max) @ Id、Vgs | 99mOhm @ 18A、10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 100 V |
| Power Dissipation (Max) | 255W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PG-TO263-3-2 |
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IPB60R099CP
- Brand: Infineon MOQ: 1000
- Delivery Date: 7-15 days Incremental amount: 1000
- Package: PG-TO263-3-2 MPQ: 1000
- Part No: IPB60R099CP
In Stock:
2000
Purchase quantity:
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