| Category | MOSFET |
| Manufacturer | Infineon |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On、Min Rds On) | 6V、10V |
| Rds On (Max) @ Id、Vgs | 3mOhm @ 100A、10V |
| Vgs(th) (Max) @ Id | 3.5V @ 275µA |
| Gate Charge (Qg) (Max) @ Vgs | 206 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 14800 pF @ 50 V |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | PG-TO220-3 |
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IPP030N10N3G
- Brand: Infineon MOQ: 500
- Delivery Date: 7-15 days Incremental amount: 500
- Package: PG-TO220-3 MPQ: 500
- Part No: IPP030N10N3G
In Stock:
1500
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