Category |
MOSFET
|
Manufacturer |
Infineon
|
FET Type |
N-Channel
|
Technology |
MOSFET (Metal Oxide)
|
Drain to Source Voltage (Vdss) |
100 V
|
Current - Continuous Drain (Id) @ 25°C |
13A (Tc)
|
Drive Voltage (Max Rds On、Min Rds On) |
10V
|
Rds On (Max) @ Id、Vgs |
78mOhm @ 13A、10V
|
Vgs(th) (Max) @ Id |
4V @ 12µA
|
Gate Charge (Qg) (Max) @ Vgs |
11 nC @ 10 V
|
Vgs (Max) |
±20V
|
Input Capacitance (Ciss) (Max) @ Vds |
716 pF @ 50 V
|
Power Dissipation (Max) |
31W (Tc)
|
Operating Temperature |
-55°C ~ 175°C (TJ)
|
Mounting Type |
Surface Mount
|
Package / Case |
PG-TO252-3
|