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IRF200P222
Step Price USD
  • Product Attribute
Category MOSFET
Manufacturer Infineon
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 182A (Tc)
Drive Voltage (Max Rds On、Min Rds On) 10V
Rds On (Max) @ Id、Vgs 6.6mOhm @ 82A、10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 203 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9820 pF @ 50 V
Power Dissipation (Max) 556W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247AC
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