Category |
MOSFET
|
Manufacturer |
onsemi
|
FET Type |
N-Channel
|
Technology |
MOSFET (Metal Oxide)
|
Drain to Source Voltage (Vdss) |
100 V
|
Current - Continuous Drain (Id) @ 25°C |
3.3A (Ta)、16A (Tc)
|
Drive Voltage (Max Rds On、Min Rds On) |
6V、10V
|
Rds On (Max) @ Id、Vgs |
110mOhm @ 3.3A、10V
|
Vgs(th) (Max) @ Id |
4V @ 250µA
|
Gate Charge (Qg) (Max) @ Vgs |
21 nC @ 10 V
|
Vgs (Max) |
±20V
|
Input Capacitance (Ciss) (Max) @ Vds |
880 pF @ 50 V
|
Power Dissipation (Max) |
2.3W (Ta)、35W (Tc)
|
Operating Temperature |
-55°C ~ 150°C (TJ)
|
Mounting Type |
Surface Mount
|
Package / Case |
8-MLP
|