Category |
MOSFET
|
Manufacturer |
Vishay
|
FET Type |
P-Channel
|
Technology |
MOSFET (Metal Oxide)
|
Drain to Source Voltage (Vdss) |
30 V
|
Current - Continuous Drain (Id) @ 25°C |
11.4A (Tc)
|
Drive Voltage (Max Rds On- Min Rds On) |
4.5V、10V、Rds On (Max) @ Id
|
Vgs |
24mOhm @ 9.1A、10V
|
Vgs(th) (Max) @ Id |
3V @ 250µA
|
Gate Charge (Qg) (Max) @ Vgs |
50 nC @ 10 V
|
Vgs (Max) |
±20V
|
Input Capacitance (Ciss) (Max) @ Vds |
1350 pF @ 15 V
|
Power Dissipation (Max) |
2.5W (Ta)、 5W (Tc)
|
Operating Temperature |
-55°C ~ 150°C (TJ)
|
Mounting Type |
Surface Mount
|
Package |
SOIC-8
|