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SI4435DDY-T1-E3
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  • Product Attribute
Category MOSFET
Manufacturer Vishay
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 11.4A (Tc)
Drive Voltage (Max Rds On- Min Rds On) 4.5V、10V、Rds On (Max) @ Id
Vgs 24mOhm @ 9.1A、10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 15 V
Power Dissipation (Max) 2.5W (Ta)、 5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package SOIC-8
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