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IRL2910PBF
Step Price USD
  • Product Attribute
Category MOSFETs
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drain to Source Voltage (Vdss) 100 V
Drive Voltage (Max Rds On、 Min Rds On) 4V、10V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 25 V
Manufacturer Infineon
Mounting Type Through Hole
Operating Temperature -55°C ~ 175°C (TJ)
Power Dissipation (Max) 200W (Tc)
Rds On (Max) @ Id、Vgs 26mOhm @ 29A、10V
Package TO-220AB
Technology MOSFET (Metal Oxide)
Vgs (Max) ±16V
Vgs(th) (Max) @ Id 2V @ 250µA
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