| Category | Bipolar Transistors(BJT) |
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic、 Vce | 30 @ 5mA、5V |
| Frequency - Transition | 130 MHz |
| Manufacturer | Infineon |
| Mounting Type | SMD/SMT |
| Power - Max | 200 mW |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Package | PG-SOT23 |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib、 Ic | 300mV @ 500µA、 10mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
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BCR133E6433HTMA1
- Brand: Infineon MOQ: 1000
- Delivery Date: 7-15 days Incremental amount: 1
- Package: MPQ: 10000
- Part No: BCR133E6433HTMA1
In Stock:
1112
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