| Category | MOSFETs |
| Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On、 Min Rds On) | 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 100 V |
| Manufacturer | Infineon |
| Mounting Type | SMD/SMT |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 83W (Tc) |
| Rds On (Max) @ Id、Vgs | 380mOhm @ 3.8A、10V |
| Package | PG-TO252-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 320µA |
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IPD60R380C6
- Brand: Infineon MOQ: 1000
- Delivery Date: 7-15 days Incremental amount: 1
- Package: MPQ: 2500
- Part No: IPD60R380C6
In Stock:
1979
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