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BSP373NH6327XTSA1
Step Price USD
  • Product Attribute
Category MOSFETs
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
Drain to Source Voltage (Vdss) 100 V
Drive Voltage (Max Rds On、 Min Rds On) 10V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 265 pF @ 25 V
Manufacturer Infineon
Mounting Type SMD/SMT
Operating Temperature -55°C ~ 150°C (TJ)
Power Dissipation (Max) 1.8W (Ta)
Rds On (Max) @ Id、Vgs 240mOhm @ 1.8A、10V
Package PG-SOT223-4
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 4V @ 218µA
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