Category |
MOSFETs
|
Current - Continuous Drain (Id) @ 25°C |
1.8A (Ta)
|
Drain to Source Voltage (Vdss) |
100 V
|
Drive Voltage (Max Rds On、 Min Rds On) |
10V
|
FET Type |
N-Channel
|
Gate Charge (Qg) (Max) @ Vgs |
9.3 nC @ 10 V
|
Input Capacitance (Ciss) (Max) @ Vds |
265 pF @ 25 V
|
Manufacturer |
Infineon
|
Mounting Type |
SMD/SMT
|
Operating Temperature |
-55°C ~ 150°C (TJ)
|
Power Dissipation (Max) |
1.8W (Ta)
|
Rds On (Max) @ Id、Vgs |
240mOhm @ 1.8A、10V
|
Package |
PG-SOT223-4
|
Technology |
MOSFET (Metal Oxide)
|
Vgs (Max) |
±20V
|
Vgs(th) (Max) @ Id |
4V @ 218µA
|