| Category | Bipolar Transistors(BJT) |
| Current - Collector (Ic) (Max) | 600 mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic、 Vce | 80 @ 10mA、5V |
| Frequency - Transition | 100MHz |
| Manufacturer | onsemi |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 625 mW |
| Package | TO-92-3 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib、 Ic | 200mV @ 5mA、50mA |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
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2N5551TA
- Brand: onsemi MOQ: 1000
- Delivery Date: 7-15 days Incremental amount: 1000
- Package: MPQ: 2000
- Part No: 2N5551TA
In Stock:
1000
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