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MMBT4401LT1G
Step Price USD
  • Product Attribute
Category Bipolar Transistors(BJT)
Current - Collector (Ic) (Max) 600 mA
DC Current Gain (hFE) (Min) @ Ic、 Vce 100 @ 150mA、1V
Frequency - Transition 250MHz
Manufacturer onsemi
Mounting Type SMD/SMT
Operating Temperature -55°C ~ 150°C (TJ)
Power - Max 300 mW
Package SOT23-3 (TO-236)
Transistor Type NPN
Vce Saturation (Max) @ Ib、 Ic 750mV @ 50mA、500mA
Voltage - Collector Emitter Breakdown (Max) 40 V
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