Category | Bipolar Transistors(BJT) |
Current - Collector (Ic) (Max) | 600 mA |
Current - Collector Cutoff (Max) | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic、 Vce | 100 @ 150mA、10V |
Frequency - Transition | 200MHz |
Manufacturer | onsemi |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 150°C (TJ) |
Power - Max | 625 mW |
Package | TO-92 (TO-226) |
Transistor Type | PNP |
Vce Saturation (Max) @ Ib、 Ic | 1.6V @ 50mA、500mA |
Voltage - Collector Emitter Breakdown (Max) | 60 V |