Category | MOSFETs |
Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
Drain to Source Voltage (Vdss) | 600 V |
Drive Voltage (Max Rds On、 Min Rds On) | 10V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 25 V |
Manufacturer | onsemi |
Mounting Type | SMD/SMT |
Operating Temperature | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 83W (Tc) |
Rds On (Max) @ Id、Vgs | 2Ohm @ 2A、10V |
Package | DPAK |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±30V |
Vgs(th) (Max) @ Id | 4.5V @ 50µA |