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NDD04N60ZT4G
Step Price USD
  • Product Attribute
Category MOSFETs
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
Drain to Source Voltage (Vdss) 600 V
Drive Voltage (Max Rds On、 Min Rds On) 10V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 640 pF @ 25 V
Manufacturer onsemi
Mounting Type SMD/SMT
Operating Temperature -55°C ~ 150°C (TJ)
Power Dissipation (Max) 83W (Tc)
Rds On (Max) @ Id、Vgs 2Ohm @ 2A、10V
Package DPAK
Technology MOSFET (Metal Oxide)
Vgs (Max) ±30V
Vgs(th) (Max) @ Id 4.5V @ 50µA
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