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FDS6670A
Step Price USD
  • Product Attribute
Category MOSFETs
Current - Continuous Drain (Id) @ 25°C 13A (Ta)
Drain to Source Voltage (Vdss) 30 V
Drive Voltage (Max Rds On、 Min Rds On) 4.5V、10V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds 2220 pF @ 15 V
Manufacturer onsemi
Mounting Type SMD/SMT
Operating Temperature -55°C ~ 150°C (TJ)
Power Dissipation (Max) 2.5W (Ta)
Rds On (Max) @ Id、Vgs 8mOhm @ 13A、10V
Package SOIC-8
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 3V @ 250µA
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