| Category | Bipolar Transistors(BJT) |
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic、 Vce | 15 @ 5mA、10V |
| Manufacturer | onsemi |
| Mounting Type | SMD/SMT |
| Power - Max | 246 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| Package | SOT23-3 (TO-236) |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib、 Ic | 250mV @ 1mA、10mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
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MMUN2232LT1G
- Brand: onsemi MOQ: 3000
- Delivery Date: 7-15 days Incremental amount: 3000
- Package: MPQ: 3000
- Part No: MMUN2232LT1G
In Stock:
11100
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