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STH110N10F7-2
Step Price USD
  • Product Attribute
Category MOSFETs
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drain to Source Voltage (Vdss) 100 V
Drive Voltage (Max Rds On、 Min Rds On) 10V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 5117 pF @ 50 V
Manufacturer ST
Mounting Type SMD/SMT
Operating Temperature -55°C ~ 175°C (TJ)
Power Dissipation (Max) 150W (Tc)
Rds On (Max) @ Id、Vgs 6.5mOhm @ 55A、 10V
Package H2Pak-2
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 4.5V @ 250µA
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