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STP26NM60N
Step Price USD
  • Product Attribute
Category MOSFETs
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drain to Source Voltage (Vdss) 600 V
Drive Voltage (Max Rds On、 Min Rds On) 10V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 50 V
Manufacturer ST
Mounting Type Through Hole
Operating Temperature 150°C (TJ)
Power Dissipation (Max) 140W (Tc)
Rds On (Max) @ Id、Vgs 165mOhm @ 10A、 10V
Package TO-220
Technology MOSFET (Metal Oxide)
Vgs (Max) ±30V
Vgs(th) (Max) @ Id 4V @ 250µA
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