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NSBC124EPDXV6T1G
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  • Product Attribute
  • Datasheet
Category Pre-Biased Bipolar Transistors
Manufacturer onsemi
Transistor Type 1 NPN、 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22kOhms
Resistor - Emitter Base (R2) 22kOhms
DC Current Gain (hFE) (Min) @ Ic、 Vce 60 @ 5mA、 10V
Vce Saturation (Max) @ Ib、 Ic 250mV @ 300µA、 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 500mW
Mounting Type Surface Mount
Package/Case SOT-563
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