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NTMS5P02R2G
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  • Product Attribute
  • Datasheet
Category MOSFETs
Manufacturer onsemi
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.95A (Ta)
Drive Voltage (Max Rds On、 Min Rds On) 2.5V、 4.5V
Rds On (Max) @ Id、 Vgs 33mOhm @ 5.4A、 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 4.5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 16 V
Power Dissipation (Max) 790mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package/Case 8-SOIC
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