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SIE822DF-T1-E3
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  • Product Attribute
  • Datasheet
Category MOSFETs
Manufacturer Vishay
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On、 Min Rds On) 4.5V、 10V
Rds On (Max) @ Id、 Vgs 3.4mOhm @ 18.3A、 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 10 V
Power Dissipation (Max) 5.2W (Ta)、 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package/Case 10-PolarPAK® (S)
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