Category | Pre-Biased Bipolar Transistors |
Manufacturer | Infineon |
Transistor Type | 1 NPN、 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10kOhms |
Resistor - Emitter Base (R2) | 10kOhms |
DC Current Gain (hFE) (Min) @ Ic、 Vce | 30 @ 5mA、 5V |
Vce Saturation (Max) @ Ib、 Ic | 300mV @ 500µA、 10mA |
Frequency - Transition | 130MHz |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package/Case | PG-SOT363-PO |