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SI4497DY-T1-GE3
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  • Product Attribute
  • Datasheet
Category MOSFETs
Manufacturer Vishay
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On、Min Rds On) 4.5V、10V
Rds On (Max) @ Id、Vgs 3.3mOhm @ 20A、10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 285 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9685 pF @ 15 V
Power Dissipation (Max) 3.5W (Ta)、7.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package/Case 8-SOIC
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