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SI4100DY-T1-E3
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  • Product Attribute
  • Datasheet
Category MOSFETs
Manufacturer Vishay
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 6.8A (Tc)
Drive Voltage (Max Rds On、Min Rds On) 6V、10V
Rds On (Max) @ Id、Vgs 63mOhm @ 4.4A、10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 50 V
Power Dissipation (Max) 2.5W (Ta)、6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package/Case 8-SOIC
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