Category | Bipolar Transistors (BJT) |
Manufacturer | Toshiba |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 300 mA |
Voltage - Collector Emitter Breakdown (Max) | 20 V |
Vce Saturation (Max) @ Ib、Ic | 100mV @ 3mA、30mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic、Vce | 200 @ 4mA、2V |
Power - Max | 150 mW |
Frequency - Transition | 30MHz |
Operating Temperature | 125°C (TJ) |
Mounting Type | Surface Mount |
Package/Case | TO-236 |