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2SC3326-A,LF
Step Price USD
  • Product Attribute
  • Datasheet
Category Bipolar Transistors (BJT)
Manufacturer Toshiba
Transistor Type NPN
Current - Collector (Ic) (Max) 300 mA
Voltage - Collector Emitter Breakdown (Max) 20 V
Vce Saturation (Max) @ Ib、Ic 100mV @ 3mA、30mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic、Vce 200 @ 4mA、2V
Power - Max 150 mW
Frequency - Transition 30MHz
Operating Temperature 125°C (TJ)
Mounting Type Surface Mount
Package/Case TO-236
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