Category | Bipolar Transistors (BJT) |
Manufacturer | Toshiba |
Voltage - Collector Emitter Breakdown(Vceo) | 50V |
Current - Collector(Ic) | 150mA |
Power(Pd) | 150mW |
Current - Collector Cutoff(Icbo) | 100nA |
Vce Saturation (Max) @ Ib、Ic | 250mV @ 10mA、100mA |
DC Current Gain (hFE) (Min) @ Ic、Vce | 200@2mA、6V |
Frequency - Transition(fT) | 80MHz |