Category |
MOSFETs
|
Manufacturer |
onsemi
|
FET Type |
P-Channel
|
Technology |
MOSFET (Metal Oxide)
|
Drain to Source Voltage (Vdss) |
60 V
|
Current - Continuous Drain (Id) @ 25°C |
4A (Ta)
|
Drive Voltage (Max Rds On、Min Rds On) |
4V、10V
|
Rds On (Max) @ Id、Vgs |
100mOhm @ 2A、10V
|
Vgs(th) (Max) @ Id |
2.6V @ 1mA
|
Gate Charge (Qg) (Max) @ Vgs |
14 nC @ 10 V
|
Vgs (Max) |
±20V
|
Input Capacitance (Ciss) (Max) @ Vds |
600 pF @ 20 V
|
Power Dissipation (Max) |
1.6W (Ta)
|
Operating Temperature |
150°C (TJ)
|
Mounting Type |
Surface Mount
|
Package/Case |
6-CPH
|