Category | Pre-Biased Bipolar Transistors |
Manufacturer | Nexperia |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2kOhms |
Resistor - Emitter Base (R2) | 47kOhms |
DC Current Gain (hFE) (Min) @ Ic、Vce | 100 @ 10mA、5V |
Vce Saturation (Max) @ Ib、Ic | 100mV @ 250µA、5mA |
Current - Collector Cutoff (Max) | 1µA |
Power - Max | 300mW |
Mounting Type | Surface Mount |
Package / Case | SOT-363 |