Category | Bipolar Transistors (BJT) |
Manufacturer | Nexperia |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown(Vceo) | 32V |
Current - Collector(Ic) | 100mA |
Power(Pd) | 250mW |
Current - Collector Cutoff(Icbo) | 100nA |
Vce Saturation (Max) @ Ib、 Ic | 210mV@50mA、2.5mA |
DC Current Gain (hFE) (Min) @ Ic、 Vce | 200@2mA、5V |
Frequency - Transition(fT) | 100MHz |
Operating Temperature | +150℃@(Tj) |