Category | Bipolar Transistors (BJT) |
Manufacturer | Nexperia |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 100 mA |
Voltage - Collector Emitter Breakdown (Max) | 40 V |
Vce Saturation (Max) @ Ib、 Ic | 300mV @ 5mA、50mA |
Current - Collector Cutoff (Max) | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic、 Vce | 100 @ 10mA、1V |
Power - Max | 250 mW |
Frequency - Transition | 180MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package/Case | TO-236AB |