| Category | MOSFET |
| Manufacturer | Infineon |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 240 V |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) |
| Drive Voltage (Max Rds On、Min Rds On) | 4.5V、10V |
| Rds On (Max) @ Id、Vgs | 6Ohm @ 350mA、10V |
| Vgs(th) (Max) @ Id | 1.8V @ 108µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
| Power Dissipation (Max) | 1.8W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PG-SOT223-4 |
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BSP89H6327XTSA1
- Brand: Infineon MOQ: 1000
- Delivery Date: 7-15 days Incremental amount: 1000
- Package: PG-SOT223-4 MPQ: 1000
- Part No: BSP89H6327XTSA1
In Stock:
2000
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