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SMUN5311DW1T1G
Step Price USD
  • Product Attribute
Category Bipolar Transistors(BJT)、Pre-Biased
Current - Collector (Ic) (Max) 100mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic、 Vce 35 @ 5mA、 10V
Manufacturer onsemi
Mounting Type SMD/SMT
Power - Max 250mW
Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) 10kOhms
Package SC-88/SC70-6/SOT-363
Transistor Type 1 NPN、1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib、 Ic 250mV @ 300µA、10mA
Voltage - Collector Emitter Breakdown (Max) 50V
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