Category | Bipolar Transistors (BJT) |
Manufacturer | NXP |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 500 mA |
Voltage - Collector Emitter Breakdown (Max) | 45 V |
Vce Saturation (Max) @ Ib、Ic | 700mV @ 50mA、500mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic、 Vce | 250 @ 100mA、 1V |
- Max | 250 mW |
Frequency - Transition | 100MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package/Case | TO-236AB |